MRF7P20040HR3 MRF7P20040HSR3
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
25
Pin, INPUT POWER (dBm)
VDD
=32Vdc,IDQA
= 150 mA, Pulsed CW 10
μsec(on), 10% Duty Cycle
44
42
27
26
Actual
Ideal
45
43
39
P
out
, OUTPUT POWER (dBm)
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 32 V
46
47
48
49
24
23
22
17 2118
19
20
f = 2025 MHz
f = 2010 MHz
41
40
f = 2025 MHz
f = 2010 MHz
f
(MHz)
P1dB
P3dB
Watts
dBm
Watts
dBm
2010
26
44.1
31
44.9
2025
26
44.2
31
44.9
Test Impedances per Compression Level
f
(MHz)
Zsource
?
Zload
?
2010
P1dB
2.49 -- j18.56
15.82 -- j0.28
2025
P1dB
2.66 -- j19.78
15.78 + j0.52
Figure 13. Pulsed CW Output Power
versus Input Power @ 32 V
NOTE: Measurement made on the Class AB, carrier side of the device.